型号:

ECH8663R-TL-H

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:MOSFET N-CH DUAL 30V 8A ECH8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
ECH8663R-TL-H PDF
标准包装 3,000
系列 -
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 8A
开态Rds(最大)@ Id, Vgs @ 25° C 20.5 毫欧 @ 4A,4.5V
Id 时的 Vgs(th)(最大) -
闸电荷(Qg) @ Vgs 12.3nC @ 4.5V
输入电容 (Ciss) @ Vds -
功率 - 最大 1.5W
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 8-ECH
包装 带卷 (TR)
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